MSRT200120D

MSRT200120D

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MSRT200120D
Diode Arrays
GeneSiC Semiconductor
DIODE MODULE GP
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Bulk
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DIODE MODULE GP 1.2KV 3TOWER

Product parameters
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TYPEDESCRIPTION
MfrGeneSiC Semiconductor
Series-
PackageBulk
Product StatusACTIVE
Package / CaseThree Tower
Mounting TypeChassis Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Diode Configuration1 Pair Series Connection
Current - Average Rectified (Io) (per Diode)200A
Supplier Device PackageThree Tower
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 200 A
Current - Reverse Leakage @ Vr10 µA @ 1600 V

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