IGN1011L70

IGN1011L70

  • image of RF FETs, MOSFETs>IGN1011L70
  • image of RF FETs, MOSFETs>IGN1011L70
IGN1011L70
RF FETs, MOSFETs
Integra Technologies
RF MOSFET GAN H
-
Bulk
1


RF MOSFET GAN HEMT 50V PL32A2

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIntegra Technologies
Series-
PackageBulk
Product StatusACTIVE
Package / CasePL32A2
Mounting TypeChassis Mount
Frequency1.03GHz ~ 1.09GHz
Power - Output80W
Gain22dB
TechnologyGaN HEMT
Supplier Device PackagePL32A2
Voltage - Rated120 V
Voltage - Test50 V
Current - Test22 mA

captcha

+86-19926599677

点击这里给我发消息
0